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TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS
FEATURES
s s s s s s s s s s s s Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..................................................... 4kV Matched Rise and Fall Times ...................... 25nsec High Peak Output Current ......................... 6A Peak Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive ...................... 10,000pF Short Delay Time ................................. 55nsec Typ. Logic High Input, Any Voltage ............. 2.4V to VDD Low Supply Current With Logic "1" Input ... 450A Low Output Impedance .................................... 2.5 Output Voltage Swing to Within 25mV of Ground or VDD
GENERAL DESCRIPTION
The TC4420/4429 are 6A (peak), single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers. Both devices have TTL-compatible inputs, which can be driven as high as VDD + 0.3V or as low as - 5V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55nsec (typ.) and the output rise and fall times are only 25nsec (typ.) into 2500pF across the usable power supply range. Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete components saving PCB area, parts and improving overall system reliability.
APPLICATIONS
s s s s Switch-Mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers
ORDERING INFORMATION
Part No. Logic
Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting Inverting Inverting Inverting Inverting Inverting Inverting Inverting
Package
Temperature Range
PIN CONFIGURATIONS
TO-220-5
VDD INPUT 1 2 3 4
8-Pin DIP
8 7 VDD OUTPUT OUTPUT GND VDD INPUT NC GND 1 2 3 4
8-Pin SOIC
8 7 VDD OUTPUT OUTPUT GND
TC4420 TC4429 Tab is Connected to VDD
INPUT GND VDD GND OUTPUT
NC GND
TC4420 TC4429
6 5
TC4420 TC4429
6 5
TC4420CAT TC4420COA TC4420CPA TC4420EOA TC4420EPA TC4420IJA TC4420MJA TC4429CAT TC4429COA TC4429CPA TC4429EOA TC4429EPA TC4429IJA TC4429MJA
5-Pin TO-220 0C to +70C 8-Pin SOIC 0C to +70C 8-Pin PDIP 0C to +70C 8-Pin SOIC - 40C to +85C 8-Pin PDIP - 40C to +85C 8-Pin CerDIP -25C to +85C 8-Pin CerDIP - 55C to +125C 5-Pin TO-220 0C to +70C 8-Pin SOIC 0C to +70C 8-Pin PDIP 0C to +70C 8-Pin SOIC - 40C to +85C 8-Pin PDIP - 40C to +85C 8-Pin CerDIP - 25C to +85C 8-Pin CerDIP - 55C to +125C
NOTE: Duplicate pins must both be connected for proper operation.
FUNCTIONAL BLOCK DIAGRAM
VDD 500 A TC4429
300 mV OUTPUT
INPUT 4.7V GND EFFECTIVE INPUT C = 38 pF TC4420
(c) 2001 Microchip Technology Inc.
DS21419A
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V Input Voltage ............................................... - 5V to > VDD Input Current (VIN > VDD) .........................................50mA Power Dissipation, (TA 70C) PDIP ............................................................... 730mW SOIC ............................................................... 470mW CerDIP ............................................................800mW 5-Pin TO-220 ......................................................1.6W Package Power Dissipation, TC 25C 5-Pin TO-220 (With Heat Sink) ......................... 12.5W Derating Factors (To Ambient) PDIP ............................................................. 8mW/C SOIC ............................................................. 4mW/C CerDIP ....................................................... 6.4mW/C 5-Pin TO-220 .............................................. 12mW/C Thermal Impedances (To Case) 5-Pin TO-220 RJ-C ...................................................... 10C/W Storage Temperature Range ................ - 65C to +150C Operating Temperature (Chip) .............................. +150C Operating Temperature Range (Ambient) C Version ............................................... 0C to +70C I Version ........................................... - 25C to +85C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Lead Temperature (Soldering, 10 sec) ................. +300C
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified.
Symbol
Input VIH VIL VIN (Max) IIN Output VOH VOL RO RO IPK IREV
Parameter
Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current
Test Conditions
Min
2.4 -- -5 - 10 VDD - 0.025 -- -- -- -- 1.5
Typ
1.8 1.3 -- -- -- -- 2.1 1.5 6 --
Max
-- 0.8 VDD +0.3 10 -- 0.025 2.8 2.5 -- --
Unit
V V V A V V A A
0V VIN VDD See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V (See Figure 5) Duty Cycle 2% t 300sec Figure 1, CL = 2500pF Figure 1, CL = 2500pF Figure 1 Figure 1 VIN = 3V VIN = 0V
Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS VDD Power Supply Current Operating Input Voltage
-- -- -- -- -- -- 4.5
25 25 55 55 0.45 55 --
35 35 75 75 1.5 150 18
nsec nsec nsec nsec mA A V
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(c) 2001 Microchip Technology Inc.
DS21419A
6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V VDD 18V,
unless otherwise specified. Symbol
Input VIH VIL VIN (Max) IIN Output VOH VOL RO RO
Parameter
Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low
Test Conditions
Min
2.4 -- -5 - 10 VDD - 0.025 -- -- -- -- -- -- -- -- -- 4.5
Typ
-- -- -- -- -- -- 3 2.3 32 34 50 65 0.45 60 --
Max
-- 0.8 VDD + 0.3 10 -- 0.025 5 5 60 60 100 100 3 400 18
Unit
V V V A V V nsec nsec nsec nsec mA A V
0V VIN VDD See Figure 1 See Figure 1 IOUT = 10mA, VDD = 18V IOUT = 10mA, VDD = 18V Figure 1, CL = 2500pF Figure 1, CL = 2500pF Figure 1 Figure 1 VIN = 3V VIN = 0V
Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS VDD Power Supply Current Operating Input Voltage
NOTE: 1. Switching times guaranteed by design.
VDD = 18V
1F 1 0.1F 2 6 7 TC4429 4 5 CL = 2500pF 8 0.1F 0V INPUT OUTPUT +18V OUTPUT 0V 10% 10% +5V INPUT 10% tD1 90% tF tD2 90%
tR 90%
INPUT: 100 kHz, square wave, tRISE = tFALL 10nsec.
Figure 1. Switching Time Test Circuit
(c) 2001 Microchip Technology Inc.
DS21419A
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
120 100 80 60 100
Fall Time vs. Supply Voltage
Rise and Fall Times vs. Temperature
50 C L = 2200 pF VDD = 18V
80
40
TIME (nsec)
C L = 10,000 pF
TIME (nsec)
TIME (nsec)
60
C L = 10,000 pF
30
tFALL tRISE
C L = 4700 pF
40
40
C L = 4700 pF C L = 2200 pF
20
C L = 2200 pF
20 0
20
10
5
7
9
11
13
15
0
5
7
VDD (V)
9 11 VDD (V)
13
15
0 -60
-20
20 60 TA (C)
100
140
Rise Time vs. Capacitive Load
100 80 60
TIME (nsec)
Fall Time vs. Capacitive Load
100 80
Propagation Delay Time vs. Supply Voltage
65 60
DELAY TIME (nsec)
60
TIME (nsec)
VDD = 5V
55 50 45 40 tD2
40
40
VDD = 5V VDD = 12V VDD = 18V
VDD = 12V VDD = 18V 20
20
tD1
10 1000
CAPACITIVE LOAD (pF)
10,000
10 1000
CAPACITIVE LOAD (pF)
10,000
35
4
6
8 10 12 14 16 SUPPLY VOLTAGE (V)
18
Propagation Delay Time vs. Temperature
50 C L = 2200 pF VDD = 18V
Supply Current vs. Capacitive Load
84
VDD = 15V
SUPPLY CURRENT (mA) SUPPLY CURRENT (mA)
Supply Current vs. Frequency
1000
CL= 2200 pF
40
70 56 42
18V
100
DELAY TIME (nsec)
tD2
30
10V 5V
tD1
20
500 kHz
28
10
10
200 kHz
14
20 kHz
0 -60 0
0
0 100 1000 CAPACITIVE LOAD (pF)
10,000
-20
20 60 TA (C)
100
140
0
100 1000 FREQUENCY (kHz)
(c) 2001 Microchip Technology Inc.
10,000
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6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
TYPICAL CHARACTERISTICS (Cont.)
High-State Output Resistance
5
2.5
Low-State Output Resistance
100 mA
4
ROUT ( ) ROUT ( )
2
10 mA
50 mA
100 mA 50 mA
1.5
3
10 mA
2
5
7
9
11 VDD (V)
13
15
1
5
7
9
11 VDD (V)
13
15
Effect of Input Amplitude on Propagation Delay
200
LOAD = 2200 pF
-9
Total nA*S Crossover*
4
DELAY TIME (nsec)
160
Crossover Area (A*S) x 10
3
120
INPUT 2.4V INPUT 3V
2
80 INPUT 5V 40 INPUT 8V AND 10V
1
0
5 6 7 8 9 10 11 12 13 14 15 VDD (V)
0
5 6 7 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (V)
* The values on this graph represent
the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2.
(c) 2001 Microchip Technology Inc.
DS21419A
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TC4420/9-6 10/18/96
6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
PACKAGE DIMENSIONS 8-Pin Plastic DIP
PIN 1
.260 (6.60) .240 (6.10)
.045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92)
.070 (1.78) .040 (1.02)
.310 (7.87) .290 (7.37)
.040 (1.02) .020 (0.51)
.015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87)
3 MIN.
.110 (2.79) .090 (2.29)
.022 (0.56) .015 (0.38)
8-Pin CerDIP
.110 (2.79) .090 (2.29)
PIN 1
.300 (7.62) .230 (5.84)
.055 (1.40) MAX. .400 (10.16) .370 (9.40) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18)
.020 (0.51) MIN. .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41)
Dimensions: inches (mm)
.150 (3.81) MIN.
3 MIN.
TC4420/9-6 10/18/96
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(c) 2001 Microchip Technology Inc.
DS21419A
6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429
PACKAGE DIMENSIONS (Cont.)
8-Pin SOIC
.157 (3.99) .150 (3.81) .244 (6.20) .228 (5.79)
.050 (1.27) TYP.
.197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .020 (0.51) .010 (0.25) .013 (0.33) .004 (0.10) .010 (0.25) .007 (0.18) .050 (1.27) .016 (0.40)
.165 (4.19)
8 MAX.
5-Pin TO-220
.117 (2.97) .103 (2.62)
.415 (10.54) .390 (9.91) .156 (3.96) .140 (3.56) DIA.
.055 (1.40) .045 (1.14)
.293 (7.44) .204 (5.18) .613 (15.57) .569 (14.45) 3 - 7.5 5 PLCS.
.590 (14.99) .482 (12.24)
.037 (0.95) .025 (0.64) .025 (0.64) .012 (0.30) .072 (1.83) .062 (1.57) .273 (6.93) .263 (6.68) .115 (2.92) .087 (2.21)
Dimensions: inches (mm)
PIN 1
(c) 2001 Microchip Technology Inc.
DS21419A
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All rights reserved. (c) 2001 Microchip Technology Incorporated. Printed in the USA. 1/01
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchipis products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
TC4420/9-6 10/18/96
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(c) 2001 Microchip Technology Inc.
DS21419A

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